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scientific edition of Bauman MSTU
SCIENCE & EDUCATION
Bauman Moscow State Technical University. El № FS 77 - 48211. ISSN 1994-0408
Mechanical Stresses Estimation in Silicon and Glass Bonded at Elevated Temperature
# 12, December 2014
DOI: 10.7463/1214.0745310
Article file:
SE-BMSTU...o965.pdf
(519.77Kb)
SE-BMSTU...o965.pdf
(519.77Kb)
During electrostatic bonding, also known as anodic bonding, silicon is bonded to glass by applying an external voltage and simultaneous heating to the temperatures of 200…450 °C. While cooling to the working temperature after bonding, pieces are mutually deformed. Due to mismatch between the linear thermal expansion coefficients of anodically bonded glass and silicon samples an internal stress state is generated. Such stresses are called thermal mismatch stresses. Aim of this paper is to define the technological and design solutions to reach minimal thermal mismatch stresses in resulting bond.
Nonlinear dependence of linear thermal expansion coefficients of bonded sample materials on the temperature makes it difficult to minimize thermal mismatch stresses by choosing the materials with close average thermal expansion coefficients within particular temperature range. To assess means of lowering thermal mismatch stress this paper offers to use two different ways to describe the assemblies: two thin bonded layers and multilayered composite material.
Based on properties of two brands of bonded glasses (LK5, Borofloat 33) and silicon the described mathematical models were used to evaluate thermal mismatch stresses at temperature Tw in samples, bonded at several different fixed temperatures Tb. The paper shows that the coefficient stresses on the silicon surface depend on the ratio of thicknesses of glass bonded to silicon wafer. Based on such evaluations it was concluded that by varying thickness of glass one can obtain zero thermal mismatch stress at a particular depth of material or obtain stress of some defined value at this depth.
Models of assembly description used in this paper can be applied to optimize anodic bonding process parameters. The paper presents such usage aimed to minimize thermal mismatch stresses in the range of operating temperatures of obtained device.
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Publications with keywords: tension, anode landing, electrostatic bonding, field assisted bonding
Publications with words: tension, anode landing, electrostatic bonding, field assisted bonding
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