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SCIENCE & EDUCATION

Bauman Moscow State Technical University.   El № FS 77 - 48211.   ISSN 1994-0408

Modeling of frequency and power characteristics of titanium dioxide memristor

# 05, May 2012
DOI: 10.7463/0512.0409216
Article file: Храповицкая_P.pdf (552.33Kb)
authors: Yu.V. Hrapovickaya, N.E. Maslova, M.L. Zanaveskin, A.N. Marchenkov

References

1. Chua L.O. Memristor – the missing circuit element. IEEE Transactions on circuit theory, 1971, vol. 18, no. 5, pp. 507-519.
http://dx.doi.org/10.1109/TCT.1971.1083337

2. Strukov D.B., Snider G. S., Stewart D. R., Williams S. R. The missing memristor found. Nature, 2008, vol. 453, pp. 80-83. DOI: 10.1038/nature06932
http://dx.doi.org/10.1038/nature06932

3. Zaplatilek K. Memristor modeling in MATLAB and Simulink. Proc. of the European computing conference, 2011, pp. 62-67.

4. Biolek Z., Biolek D., Biolkova V. SPICE model of memristor with nonlinear dopant drift. Radioengineering, 2009, vol. 18, no. 2, pp. 210-214.

5. Yang J.J. ., Picket M. D., Li X., Ohlberg D.A.A., Steward D. R., Williams R. S. Memristive switching mechanism for metal/oxide/metal nanodevices . Nature nanotechnology, 2008, no. 3, pp. 429-433.
http://dx.doi.org/10.1038/nnano.2008.160

6. Miller K. Fabrication and modeling of thin-film anodic titania memristors. M.Sc. Thesis. Ames, Iowa, Iowa State University, 2010, pp. 4-6.

7. Arakelian V.M. Fotoelektrokhimicheskoe poluchenie vodoroda s ispol'zovaniem metalloksidnykh poluprovodnikovykh fotoelektrodov [Photoelectrochemical production of hydrogen using metal oxide semiconductor photoelectrodes]. Al'ternativnaia energetika i ekologiia[Alternative energy and ecology], 2006, no. 11, pp. 78-84.

8. Kuz'min N., Buzmakov A. Promyshlennaia flesh-pamiat' [Industrial flash memory]. Komponenty i tekhnologii [Components and technologies], 2009, no. 10, pp. 33-38.

9. Vogt K.W., Kohl P.A., Carter W.B., Bell R.A., Bottomley L.A. Characterization of thin titanium oxide adhesion layers on gold: resistivity, morphology and composition, Surface science, 1994, vol. 301, no. 1-3, pp. 203-213.
http://dx.doi.org/10.1016/0039-6028(94)91300-5

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