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Study of thermal degradation of AuGeNi ohmic contacts of resonant tunneling diodes based on nanoscale AlAs / GaAs heterostructures
Engineering Education # 09, September 2012
DOI: 10.7463/0912.0453636
The authors conducted a study of thermal degradation of AuGeNi RTD ohmic contacts. They propose an analytical dependence of contact resistance of AuGeNi RTD ohmic contacts on temperature and time (valid at temperatures ≤ 300 ° C). It can be used to predict reliability of RTD and electronic devices based on it in the given operating conditions.
 
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