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About reliability improvement of mixing AlAs/GaAs resonant tunneling diodes by design and engineering means
Engineering Education # 11, November 2013
DOI: 10.7463/1113.0637834
In this article the authors propose an investigation method of changing current–voltage characteristic of a resonant tunneling diode influenced by degradation processes in its structure. An investigation of degradation of an AlAs/GaAs resonant tunneling diode structure at the temperature of 300°C was conducted. The findings show that in these conditions change in current–voltage characteristic of the resonant tunneling diode is mainly due to degradation of ohmic contacts. An analytic dependence of the resonant tunneling diode AuGeNi ohmic contact resistance on time and temperature was determined.
Study of thermal degradation of AuGeNi ohmic contacts of resonant tunneling diodes based on nanoscale AlAs / GaAs heterostructures
Engineering Education # 09, September 2012
DOI: 10.7463/0912.0453636
The authors conducted a study of thermal degradation of AuGeNi RTD ohmic contacts. They propose an analytical dependence of contact resistance of AuGeNi RTD ohmic contacts on temperature and time (valid at temperatures ≤ 300 ° C). It can be used to predict reliability of RTD and electronic devices based on it in the given operating conditions.
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