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DOPING IN SILICON WAFER WITH MULTIPLEX NANORELIEF OF SURFACE: DISTANCE COMPUTER SIMULATION
Engineering Education # 02, February 2010
The investigation of technological process parameters effect (sighting angle and energy of implantation) on concentrations distributions of doping impurities in silicon substrate are conducted by computer simulation with multiplex nanorelief of surface. 
Distance education, doping in silicon: remote access computer simulation
Engineering Education # 10, October 2009
The program complex intended for distance education is observed. The procedure and results of computer simulation of doping in a silicon using for creation of semiconductor materials are carried out.
 
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